STN2N06 n - channel enhancement mode power mos transistor advance data n typical r ds(on) = 0.21 w n avalanche rugged technology n sot-223 can be wave or reflow soldered n available in tape and reel on request n 150 o c operating temperature n application oriented characterization applications n hard disk drivers n small motor current sense circuits n dc-dc converters and power supplies internal schematic diagram absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v dgr drain- gate voltage (r gs = 20 k w )60v v gs gate-source voltage 20 v i d (*) drain current (continuous) at t c = 25 o c2a i d (*) drain current (continuous) at t c = 100 o c 1.3 a i dm ( ) drain current (pulsed) 8 a p tot total dissipation at t c = 25 o c 2.7 w derating factor 0.022 w/ o c t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area (*) limited by package type v dss r ds(on) i d cont STN2N06 60 v < 0.250 w 2 a march 1996 1 2 2 3 sot-223 1/5
thermal data r thj-pcb r thj-amb t l thermal resistance junction-pc board max thermal resistance junction-ambient max (surface mounted) maximum lead temperature for soldering purpose 46 60 260 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 2a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 25 v) 40 mj e ar repetitive avalanche energy (pulse width limited by t j max, d < 1%) 10 mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 1.3 a electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating x 0.8 t c = 125 o c 250 1000 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 234v r ds(on) static drain-source on resistance v gs = 10 v i d = 1 a v gs = 10 v i d = 1 a t c = 100 o c 0.21 0.25 0.5 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 2a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 1 a 0.8 1.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 v 260 90 30 340 120 40 pf pf pf STN2N06 2/5
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 30 v i d = 4 a r g = 47 w v gs = 10 v 14 75 20 100 ns ns (di/dt) on turn-on current slope v dd = 48 v i d = 8 a r g = 47 w v gs = 10 v 240 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 48 v i d = 8 a v gs = 10 v 13 7 4 20 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 48 v i d = 8 a r g = 47 w v gs = 10 v 16 22 45 25 30 60 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 2 8 a a v sd ( * ) forward on voltage i sd = 2 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 8 a di/dt = 100 a/ m s v dd = 25 v t j = 150 o c 70 0.18 5 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area STN2N06 3/5
dim. mm mils min. typ. max. min. typ. max. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.630.650.6724.825.626.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 l 6.3 6.5 6.7 248 255.9 263.8 c c b e l a b e1 l1 f g c d l2 e4 sot223 mechanical data p008b STN2N06 4/5
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1995 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . . . STN2N06 5/5
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